N
O
T RE
CO
MMENDED F
O
R NEW DE
S
I
G
N
NOT RECOMMENDED FOR NEW DESIGN
MRF9030NR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
21 45Gps
960
14
22
930
?38
50
IRL
20 40
η
IMD
VDD
= 26 Vdc
Pout
= 30 W (PEP)
IDQ
= 250 mA
Two?Tone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
G
ps
, POWER GAIN (dB)
?10
?18
?14
, DRAIN
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
IRL, INPUT RETURN
LOSS (dB)
?12
?16
19 35
18
?30
17
?32
16
?34
15
?36
955
950
945
940
935
100
18.5
21.5
0.1
IDQ
= 375 mA
300 mA
VDD
= 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
21
20.5
20
19.5
19
10
1
250 mA
200 mA
100
?55
?15
0.1
IDQ
= 200 mA
375 mA
f1 = 945 MHz
VDD
= 26 Vdc
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)
IMD,
?20
?25
?30
?35
?40
?45
?50
10
1
250 mA
300 mA
100
?80
?10
0.1
7th Order
VDD
= 26 Vdc
IDQ
= 250 mA
f1 = 945 MHz
f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)
IMD,
?20
?30
?40
?50
?60
?70
10
1
5th Order
3rd Order
100
10
22
0.1
0
60
20 50Gps
12 10η
VDD
= 26 Vdc
IDQ
= 250 mA
f = 945 MHz
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)
η
18 40
16 30
14 20
10
1
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